8 Gb/s CMOS compatible monolithically integrated silicon optical receiver

We have presented a high-speed monolithically integrated optical receiver fabricated in an unmodified 130 nm CMOS process. The receiver operated with BER<10/sup -9/ up to 8 Gb/s with a sensitivity of -10.9 dBm at 5 Gb/s and -15.4 dBm at 3.125 Gb/s. Single voltage supply (3 V) was possible up to 3.125 Gb/s and at 5 V up to 5 Gb/s. Deeper electrodes can improve performance of the photodetector reducing the reverse bias necessary for high sensitivity high speed operation. This is the highest speed operation reported for any Si-based optical receiver.