论文信息 - MOS Transistors on SOI Substrate: On-Wafer Measurement for Small-Signal Parameters Extraction Procedure

MOS Transistors on SOI Substrate: On-Wafer Measurement for Small-Signal Parameters Extraction Procedure

A new extraction procedure for devices on silicium substrate is presented. This paper deals mainly with a reliable estimation of extrinsic series parameters, which is difficult in MOS transistors due to their isolated gate. This method relies in particular on a judicious on-wafer measurements session.

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