论文信息 - Room temperature operated 3.1-μm type-I GaSb-based diode lasers with 80mW continuous wave output power

Room temperature operated 3.1-μm type-I GaSb-based diode lasers with 80mW continuous wave output power

High-power diode lasers with heavily-strained In(Al)GaAsSb type-I quantum-well active region emitting at 3.1 mum at room temperature are reported. Devices operate in continuous-wave regime with output power above 200 mW and 80 mW at 250 K and 285 K, correspondingly.

D. Donetsky | T. Hosoda | L. Shterengas | G. Kipshidze | G. Belenky

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