On the Resiliency of NCFET Circuits Against Voltage Over-Scaling

Approximate computing is established as a design alternative to improve the energy requirements of a vast number of applications, leveraging their intrinsic error tolerance. Voltage over-scaling (VOS) is one of the most energy-efficient approximation techniques, but its exploitation is still limited due to the large errors it induces. In this work, we investigate, for the first time, the resiliency of negative capacitance transistor (NCFET) technology to VOS in comparison to conventional CMOS technology. Our work reveals that circuits implemented using the NCFET technology exhibit much less timing errors under VOS due to the inherent voltage amplification provided by the ferroelectric layer. NCFET is one of the very promising emerging technologies that is rapidly evolving for low-power circuit as it enables the transistors to switch faster without the need to increase the voltage. We demonstrate how NCFET technology allows circuit designers to effectively employ VOS to boost the efficiency of their approximate circuits, while still keeping the induced errors marginal. Our analysis shows that the VOS-resilience of NCFET circuits enables maximizing the voltage decrease and thus, NCFET based VOS approximate circuits achieve from $1.83\times$ up to $2.78\times$ higher energy reduction compared to the corresponding FinFET circuits for the same error bounds.