Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

InGaN/GaN quantum wells (QWs) grown with identical conditions on m-plane and c-plane GaN substrates were studied by cathodoluminescence spectroscopy. At a low current of 10 nA, the emission intensity and wavelength of the m-plane aligned QWs were found to be about two times stronger and 19.5 nm blueshifted with respect to that of the c-plane aligned QWs. An increase in the current over three orders of magnitude was found to result in an increase in the emission intensities, with faster saturation in the m-plane aligned QWs. This was explained by the screening of quantum-confined Stark effect in the emission efficiency of the c-plane aligned QWs.

[1]  C. Mion.  Investigation of the Thermal Properties of Gallium Nitride using the Three Omega Technique , 2006 .

[2]  Vincenzo Fiorentini,et al.  Spontaneous versus Piezoelectric Polarization in III–V Nitrides: Conceptual Aspects and Practical Consequences , 1999 .

[3]  H. Ohta,et al.  Dislocation-Free m-Plane InGaN/GaN Light-Emitting Diodes on m-Plane GaN Single Crystals , 2006 .

[4]  Hadis Morkoç,et al.  On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers , 2008 .

[5]  Isamu Akasaki,et al.  Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells , 2000 .

[6]  Michael R. Krames,et al.  Auger recombination in InGaN measured by photoluminescence , 2007 .

[7]  Takashi Mukai,et al.  Ultraviolet InGaN and GaN Single-Quantum-Well-Structure Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates , 1999 .

[8]  Mathew C. Schmidt,et al.  Improved electroluminescence on nonpolar m ‐plane InGaN/GaN quantum wells LEDs , 2007 .

[9]  C. Burrus,et al.  Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect , 1984 .

[10]  J. Muth,et al.  Temperature and Dislocation Density Effects on the Thermal Conductivity of Bulk Gallium Nitride , 2005 .

[11]  Edward A. Preble,et al.  Growth and Fabrication of 2 inch Free-standing GaN Substrates via the Boule Growth Method , 2003 .

[12]  Isamu Akasaki,et al.  Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells , 1997 .

[13]  K. Katayama,et al.  Improvements of external quantum efficiency of InGaN-based blue light-emitting diodes at high current density using GaN substrates , 2007 .

[14]  S. Denbaars,et al.  High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar m-plane Bulk GaN Substrate , 2007 .

[15]  InGaN/GaN quantum wells grown on polar and nonpolar GaN substrates , 2009 .

[16]  Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes : Semiconductors , 2001 .

[17]  K. Udwary,et al.  Fabrication and characterization of native non-polar GaN substrates , 2008 .

[18]  Edward A. Preble,et al.  Light-emitting diode development on polar and non-polar GaN substrates , 2008 .