论文信息 - Corner effect in multiple-gate SOI MOSFETs

Corner effect in multiple-gate SOI MOSFETs

Separate formation of channels in corners and sides of triple-gate SOI MOSFETs is observed. This phenomenon degrades the I/sub on//I/sub off/ ratio and the subthreshold slope, but it is present only if high doping concentrations and corners with a small radius of curvature are used.

J. P. Colinge | W. Xiong | J. W. Park | J. Colinge | W. Xiong

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