论文信息 - High-speed pin ultraviolet photodetectors fabricated on GaN

High-speed pin ultraviolet photodetectors fabricated on GaN

The authors report very high-speed GaN-based ultraviolet photodetectors using a pin device structure. The best devices have rise times of -90 ps and bandwidths of -1.6 GHz at 30 V. This is the fastest speed for a GaN-based photodetector reported to date.

[1] K. Brennan,et al. Monte Carlo Calculation of Hole Transport in Bulk Zincblende Phase of GaN including a Pseudopotential Calculated Band Structure , 1995 .

[2] Henryk Temkin,et al. Low noise p-π-n GaN ultraviolet photodetectors , 1997 .

[3] Low dark current pin ultraviolet photodetectors fabricated on GaN grown by metal organic chemical vapour deposition , 1998 .

[4] Hadis Morkoç,et al. High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures , 1997 .

[5] K. Brennan,et al. Electron transport characteristics of GaN for high temperature device modeling , 1998 .