SPECTROSCOPIC ELLIPSOMETRY STUDY ON E2 PEAK SPLITTING OF SI-GE SHORT PERIOD SUPERLATTICES
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[1] C. Pickering,et al. Dielectric function spectra of strained and relaxed Si1−xGex alloys (x=0–0.25) , 1994 .
[2] M. Cardona,et al. Electroreflectance study of the E1 and E0 optical transitions in thin Ge/Si superlattices , 1993 .
[3] T. E. Haynes,et al. Optical functions of silicon-germanium alloys determined using spectroscopic ellipsometry , 1993 .
[4] H. Presting,et al. Optical transitions in strained Ge/Si superlattices , 1992 .
[5] J. Baribeau. X‐ray reflectometry on (SimGen)p short‐period superlattices , 1991 .
[6] Christensen,et al. Electronic and optical properties of strained Ge/Si superlattices. , 1991, Physical review. B, Condensed matter.
[7] J. Baribeau,et al. Low angle x‐ray reflection study of ultrathin Ge films on (100) Si , 1990 .
[8] Christensen,et al. Interband transitions in strain-symmetrized Ge4Si6 superlattices. , 1990, Physical review letters.
[9] D. J. Lockwood,et al. Growth and characterization of SiGe atomic layer superlattices , 1989 .
[10] Pearsall,et al. Structure and optical properties of strained Ge-Si superlattices grown on (001) Ge. , 1989, Physical review letters.
[11] Josef Humlíček,et al. Optical spectra of SixGe1−x alloys , 1989 .
[12] Van de Walle CG,et al. Electronic properties of the (100) (Si)/(Ge) strained-layer superlattices. , 1988, Physical review. B, Condensed matter.
[13] Wood,et al. New optical transitions in strained Si-Ge superlattices. , 1987, Physical review. B, Condensed matter.
[14] Cardona,et al. Temperature dependence of the dielectric function and interband critical points in silicon. , 1987, Physical review. B, Condensed matter.
[15] Stergios Logothetidis,et al. Temperature dependence of the dielectric function of germanium , 1984 .
[16] A. A. Studna,et al. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV , 1983 .
[17] A. A. Studna,et al. Chemical etching and cleaning procedures for Si, Ge, and some III‐V compound semiconductors , 1981 .
[18] D. E. Aspnes,et al. Fourier transform detection system for rotating-analyzer ellipsometers , 1973 .
[19] A. Savitzky,et al. Smoothing and Differentiation of Data by Simplified Least Squares Procedures. , 1964 .
[20] Rabinowitz,et al. Two-photon spectroscopy of MgO:Ni2+ , 1991, Physical review. B, Condensed matter.
[21] T. S. Moss,et al. Handbook on semiconductors , 1980 .
[22] R. Azzam,et al. Ellipsometry and polarized light , 1977 .
[23] B. Seraphin. Optical Properties of Solids: New Developments , 1976 .
[24] U. Gnutzmann,et al. Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structure , 1974 .