Microwave transistor modeling
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Giorgio Vannini | Dominique Schreurs | Gustavo Avolio | Alina Caddemi | Giovanni Crupi | Antonio Raffo | D. Schreurs | G. Vannini | A. Raffo | G. Crupi | A. Caddemi | G. Avolio
[1] T. Mimura,et al. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions , 1980 .
[2] A. Raffo,et al. Waveforms-based large-signal identification of transistor models , 2012, 2012 IEEE/MTT-S International Microwave Symposium Digest.
[3] Christian Fager,et al. Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model , 2002 .
[4] W. Kuang,et al. Microwave AlGaN/GaN HFETs , 2005, IEEE Microwave Magazine.
[5] D. Delagebeaudeuf,et al. Two-dimensional electron gas m.e.s.f.e.t. structure , 1980 .
[6] Diego Marti,et al. Transistor Modeling: Robust Small-Signal Equivalent Circuit Extraction in Various HEMT Technologies , 2013, IEEE Microwave Magazine.
[7] W. R. Curtice,et al. Self-Consistent GaAs FET Models for Amplifier Design and Device Diagnostics , 1984 .
[8] F. Filicori,et al. Empirical modeling of low-frequency dispersive effects due to traps and thermal phenomena in III-V FETs , 1995, Proceedings of 1995 IEEE MTT-S International Microwave Symposium.
[9] Marc Camiade,et al. Large signal design of broadband monolithic microwave frequency dividers and phase-locked oscillators , 1993 .
[10] A. Caddemi,et al. Accurate Multibias Equivalent-Circuit Extraction for GaN HEMTs , 2006, IEEE Transactions on Microwave Theory and Techniques.
[11] Alina Caddemi,et al. Temperature effects on DC and small signal RF performance of AlGaAs/GaAs HEMTs , 2006, Microelectron. Reliab..
[12] J. Verspecht,et al. Broad-band poly-harmonic distortion (PHD) behavioral models from fast automated simulations and large-signal vectorial network measurements , 2005, IEEE Transactions on Microwave Theory and Techniques.
[13] Giorgio Vannini,et al. GaN HEMT noise modeling based on 50‐Ω noise factor , 2015 .
[14] Thomas J. Brazil,et al. A scalable general-purpose model for microwave FETs including DC/AC dispersion effects , 1997 .
[15] Peter Russer,et al. An efficient method for computer aided noise analysis of linear amplifier networks , 1976 .
[16] Haifeng Sun,et al. Low-Noise Microwave Performance of 0.1 $\mu$m Gate AlInN/GaN HEMTs on SiC , 2010, IEEE Microwave and Wireless Components Letters.
[18] P. Colantonio,et al. An approach to harmonic load- and source-pull measurements for high-efficiency PA design , 2004, IEEE Transactions on Microwave Theory and Techniques.
[19] R. Quéré,et al. An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR , 2007, IEEE Transactions on Microwave Theory and Techniques.
[20] H. Massler,et al. A simplified broad-band large-signal nonquasi-static table-based FET model , 2000 .
[21] Jianjun Xu,et al. Dynamic FET model - DynaFET - for GaN transistors from NVNA active source injection measurements , 2014, 2014 IEEE MTT-S International Microwave Symposium (IMS2014).
[22] G. Dambrine,et al. A new method for determining the FET small-signal equivalent circuit , 1988 .
[23] M. Asif Khan,et al. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction , 1993 .
[24] Giorgio Vannini,et al. Mathematical approach to large-signal modelling of electron devices , 1991 .
[25] Ruimin Xu,et al. An Electrothermal Model for Empirical Large- Signal Modeling of AlGaN/GaN HEMTs Including Self-Heating and Ambient Temperature Effects , 2014, IEEE Transactions on Microwave Theory and Techniques.
[26] R. S. Pengelly,et al. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs , 2012, IEEE Transactions on Microwave Theory and Techniques.
[27] G Pailloncy,et al. Large-Signal Network Analysis Including the Baseband , 2011, IEEE Microwave Magazine.
[28] Dominique Schreurs,et al. On the small signal modeling of advanced microwave FETs: A comparative study , 2008 .
[29] W. Heinrich,et al. Noise modeling of GaN HEMT devices , 2012, 2012 7th European Microwave Integrated Circuit Conference.
[30] Alina Caddemi,et al. Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure down to 30 K , 2006, IEEE Transactions on Instrumentation and Measurement.
[31] Alina Caddemi,et al. Source-pull characterization of FinFET noise , 2010, Proceedings of the 17th International Conference Mixed Design of Integrated Circuits and Systems - MIXDES 2010.
[32] K.J. Webb,et al. The influence of transistor nonlinearities on noise properties , 2005, IEEE Transactions on Microwave Theory and Techniques.
[33] Andrea Ferrero,et al. Accuracy Evaluation of On-Wafer Load-Pull Measurements , 2000, 55th ARFTG Conference Digest.
[34] G. Tränkle,et al. Analysis of the Survivability of GaN Low-Noise Amplifiers , 2007, IEEE Transactions on Microwave Theory and Techniques.
[35] A. Siligaris,et al. A new empirical nonlinear model for sub-250 nm channel MOSFET , 2003, IEEE Microwave and Wireless Components Letters.
[36] J. Wood,et al. Bias-dependent linear, scalable millimeter-wave FET model , 2000, IMS 2000.
[37] I. Hunter,et al. Coupled electrothermal, electromagnetic, and physical modeling of microwave power FETs , 2006, IEEE Transactions on Microwave Theory and Techniques.
[38] Valeria Vadala,et al. Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique , 2014, IEEE Transactions on Microwave Theory and Techniques.
[39] Bumman Kim,et al. The Doherty Power Amplifier: Review of Recent Solutions and Trends , 2015, IEEE Transactions on Microwave Theory and Techniques.
[40] Dominique Schreurs,et al. Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3v3 compact model , 2002 .
[41] David E. Root,et al. Technology Independent Large Signal Non Quasi-Static FET Models by Direct Construction from Automatically Characterized Device Data , 1991, 1991 21st European Microwave Conference.
[42] Giorgio Vannini,et al. Nonlinear modeling of LDMOS transistors for high-power FM transmitters , 2014 .
[43] Fabrizio Bonani,et al. Physics-based simulation techniques for small- and large-signal device noise analysis in RF applications , 2003 .
[44] Dominique Schreurs,et al. Large-Signal Time-Domain Waveform-Based Transistor Modeling , 2013 .
[45] Earl W. McCune. Operating Modes of Dynamic Power Supply Transmitter Amplifiers , 2014 .
[46] Alessandra Costanzo,et al. Theoretical and Numerical Design of a Wireless Power Transmission Link With GaN-Based Transmitter and Adaptive Receiver , 2014, IEEE Transactions on Microwave Theory and Techniques.
[47] Herbert Zirath,et al. Accurate small-signal modeling of HFET's for millimeter-wave applications , 1996 .
[48] Walter Ciccognani,et al. Black‐box noise modeling of GaAs HEMTs under illumination , 2015 .
[49] Manfred Berroth,et al. High-frequency equivalent circuit of GaAs FETs for large-signal applications , 1991 .
[50] N.B. Carvalho,et al. Nonlinear device model of microwave power GaN HEMTs for high power-amplifier design , 2004, IEEE Transactions on Microwave Theory and Techniques.
[51] J. Verspecht,et al. Large-signal network analysis , 2005, IEEE Microwave Magazine.
[52] T. Kacprzak,et al. Computer Calculation of Large-Signal GaAs FET Amplifier Characteristics , 1985 .
[53] Li Shen,et al. An improved millimeter-wave small-signal modeling approach for HEMTs , 2014 .
[54] Lester F. Eastman,et al. Undoped AlGaN/GaN HEMTs for microwave power amplification , 2001 .
[55] Marco Pirola,et al. Harmonic Load-Pull Techniques: An Overview of Modern Systems , 2013, IEEE Microwave Magazine.
[56] Walter Ciccognani,et al. Polynomial noise modeling of silicon-based GaN HEMTs , 2014 .
[57] Roger D. Pollard,et al. Effects of DUT mismatch on the noise figure characterization: a comparative analysis of two Y-factor techniques , 2002, IEEE Trans. Instrum. Meas..
[58] Dominique Schreurs,et al. Applications of vector non-linear microwave measurements , 2010 .
[59] Zlatica Marinkovic,et al. Temperature-dependent models of low-noise microwave transistors based on neural networks , 2005 .
[60] Giorgio Vannini,et al. Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design , 2015 .
[61] Geok Ing Ng,et al. Analytical Modeling of High-Frequency Noise Including Temperature Effects in GaN HEMTs on High-Resistivity Si Substrates , 2010, IEEE Transactions on Electron Devices.
[62] Dominique Schreurs,et al. Microwave De-embedding : From Theory to Applications , 2013 .
[63] Dominique Schreurs,et al. Construction of behavioral models for microwave devices from time domain large-signal measurements to speed up high-level design simulations , 2003 .
[64] Antonio Raffo,et al. GaN HEMT Noise Model Based on Electromagnetic Simulations , 2015, IEEE Transactions on Microwave Theory and Techniques.
[65] M. Pospieszalski. Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence , 1989 .
[66] Ulrich L. Rohde,et al. A new and reliable direct parasitic extraction method for MESFETs and HEMTs , 1993, 1993 23rd European Microwave Conference.
[67] Ulrich L. Rohde,et al. A general noise de-embedding procedure for packaged two-port linear active devices , 1992 .
[68] Dominique Schreurs,et al. A 110-GHz large-signal lookup-table model for InP HEMTs including impact ionization effects , 2003 .
[69] Fujiang Lin,et al. FET model parameter extraction based on optimization with multiplane data-fitting and bidirectional search-a new concept , 1994 .
[70] A. Zarate-de Landa,et al. Advances in Linear Modeling of Microwave Transistors , 2009, IEEE Microwave Magazine.
[71] I. Angelov,et al. Extensions of the Chalmers nonlinear HEMT and MESFET model , 1996 .
[72] P.A. Traverso,et al. Accurate pHEMT nonlinear modeling in the presence of low-frequency dispersive effects , 2005, IEEE Transactions on Microwave Theory and Techniques.
[73] G. Kompa,et al. Large-Signal Model for AlGaN/GaN HEMTs Accurately Predicts Trapping- and Self-Heating-Induced Dispersion and Intermodulation Distortion , 2007, IEEE Transactions on Electron Devices.
[74] J. Benedikt,et al. Nonlinear Data Utilization: From Direct Data Lookup to Behavioral Modeling , 2009, IEEE Transactions on Microwave Theory and Techniques.
[75] Hongtao Xu,et al. Influence of epitaxial structure in the noise figure of AlGaN/GaN HEMTs , 2005, IEEE Transactions on Microwave Theory and Techniques.
[76] A. Caddemi,et al. A New Millimeter-Wave Small-Signal Modeling Approach for pHEMTs Accounting for the Output Conductance Time Delay , 2008, IEEE Transactions on Microwave Theory and Techniques.
[77] Angelos Antonopoulos,et al. Open-source circuit simulation tools for RF compact semiconductor device modelling , 2014 .
[78] P. J. Tasker,et al. Frequency scalable large signal transistor behavioral model based on admittance domain formulation , 2014, 2014 IEEE MTT-S International Microwave Symposium (IMS2014).
[79] Antonio Nanni,et al. GaN-Based Robust Low-Noise Amplifiers , 2013, IEEE Transactions on Electron Devices.
[80] W. Curtice. A MESFET Model for Use in the Design of GaAs Integrated Circuits , 1980 .
[81] F. Giannini,et al. A C-band high efficiency second harmonic tuned hybrid power amplifier in GaN technology , 2006, 2005 European Microwave Conference.
[82] T. Fjeldly,et al. Compact Charge-Based Physical Models for Current and Capacitances in AlGaN/GaN HEMTs , 2013, IEEE Transactions on Electron Devices.
[83] Giovanni Ghione,et al. Guest Editorial Special Issue on GaN Electronic Devices , 2013 .
[84] Fadhel M. Ghannouchi,et al. Enhanced Analysis and Design Method of Concurrent Dual-Band Power Amplifiers With Intermodulation Impedance Tuning , 2013, IEEE Transactions on Microwave Theory and Techniques.
[85] Antonio Raffo,et al. Neural approach for temperature‐dependent modeling of GaN HEMTs , 2015 .
[86] T. Brazil,et al. An Improved Small-Signal Parameter-Extraction Algorithm for GaN HEMT Devices , 2008, IEEE Transactions on Microwave Theory and Techniques.
[87] Zheng Zhong,et al. A 3-D Table-Based Method for Non-Quasi-Static Microwave FET Devices Modeling , 2012, IEEE Transactions on Microwave Theory and Techniques.
[88] Alina Caddemi,et al. On wafer‐scaled GaAs HEMTs: Direct and robust small signal modeling up to 50 GHz , 2009 .
[89] Sam-Dong Kim,et al. A Gate-Width Scalable Method of Parasitic Parameter Determination for Distributed HEMT Small-Signal Equivalent Circuit , 2013, IEEE Transactions on Microwave Theory and Techniques.
[90] E. Morifuji,et al. Technology independent degradation of minimum noise figure due to pad parasitics , 1998, 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).
[91] F. Ramirez,et al. Analysis of Near-Carrier Phase-Noise Spectrum in Free-Running Oscillators in the Presence of White and Colored Noise Sources , 2010, IEEE Transactions on Microwave Theory and Techniques.
[92] D. Schreurs,et al. Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design , 2010, IEEE Transactions on Microwave Theory and Techniques.
[93] V. A. Monaco,et al. A nonlinear integral model of electron devices for HB circuit analysis , 1992 .
[94] Franco Giannini,et al. Evaluation of GaN technology in power amplifier design , 2009 .
[95] H. Zirath,et al. An empirical-table based FET model , 1999, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).
[96] Patrick Roblin,et al. Model-Based Nonlinear Embedding for Power-Amplifier Design , 2014, IEEE Transactions on Microwave Theory and Techniques.
[97] Bart Nauwelaers,et al. Identification technique of FET model based on vector nonlinear measurements , 2011 .
[98] J. Rathmell,et al. Broad-band characterization of FET self-heating , 2005, IEEE Transactions on Microwave Theory and Techniques.
[99] H. Zirath,et al. A new empirical nonlinear model for HEMT and MESFET devices , 1992 .
[100] A. Caddemi,et al. HEMT for low noise microwaves: CAD oriented modeling , 1992 .
[101] Valeria Vadala,et al. Behavioral Modeling of GaN FETs: A Load-Line Approach , 2014, IEEE Transactions on Microwave Theory and Techniques.
[102] Dominique Schreurs,et al. Microwave noise modeling of FinFETs , 2011 .
[103] Antonio Raffo,et al. Investigation on the thermal behavior of microwave GaN HEMTs , 2011 .
[104] M. Pagani,et al. Nonlinear RF device modelling in the presence of low‐frequency dispersive phenomena , 2006 .
[105] Yoji Ohashi,et al. An approach to determining an equivalent circuit for HEMTs , 1995 .
[106] W. Van Moer,et al. A large-signal network analyzer: Why is it needed? , 2006, IEEE Microwave Magazine.
[107] C. Campbell,et al. GaN Takes the Lead , 2012, IEEE Microwave Magazine.
[108] Jin-Koo Rhee,et al. Millimeter-wave small-signal modeling with optimizing sensitive-parameters for metamorphic high electron mobility transistors , 2010 .