Radiation hardness of silicon detectors for high-energy physics applications

Oxygenated and standard (not oxygenated) silicon diodes processed by CNM and IRST have been irradiated by 27 MeV protons and compared with standard devices from ST Microelectronics. As expected, the leakage current density increase rate (/spl alpha/) and its annealing do not show any significant dependence on starting material, oxygenation and/or device processing. On the contrary, oxygenation improves the radiation hardness by decreasing the acceptor introduction rate (/spl beta/) and mitigating the depletion voltage (V/sub dep/) increase, with the /spl beta/ parameter depending also on starting material and/or effects related to device processing for standard diodes. Finally, these results are included in a general review on the state of the art for silicon detector radiation hardening, confirming the good performance of the considered technologies.

[1]  G. Lindström,et al.  Radiation damage in silicon detectors , 2003 .

[2]  D. Bisello,et al.  New evidence of dominant processing effects in standard and oxygenated silicon diodes after neutron irradiation , 2003 .

[3]  D. Bisello,et al.  Radiation Hardening of Silicon for Detectors by Preliminary Irradiation , 2003 .

[4]  D. Bisello,et al.  Neutron irradiation effects on standard and oxygenated silicon diodes , 2002 .

[5]  J. M. Rafí,et al.  Novel results on fluence dependence and annealing behavior of oxygenated and non-oxygenated silicon detectors , 2002 .

[6]  A. Candelori,et al.  Low- and high-energy proton irradiations of standard and oxygenated silicon diodes , 2001 .

[7]  D. Bisello,et al.  Proton Irradiation Effects on Standard and Oxygenated Silicon Diodes , 2001 .

[8]  A. Candelori,et al.  Radiation damage of standard and oxygenated silicon diodes irradiated by 16-MeV and 27-MeV protons , 2001 .

[9]  P. Ciampolini,et al.  Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration , 2001 .

[10]  P. Ciampolini,et al.  Developments for radiation hard silicon detectors by defect engineering—results by the CERN RD48 (ROSE) Collaboration , 2001 .

[11]  D. Bisello,et al.  SIRAD: AN IRRADIATION FACILITY AT THE LNL TANDEM ACCELERATOR FOR RADIATION DAMAGE STUDIES ON SEMICONDUCTOR DETECTORS AND ELECTRONIC DEVICES AND SYSTEMS , 2001 .

[12]  A. Candelori,et al.  Observation of an energy dependence of the radiation damage on standard and oxygenated silicon diodes by 16, 21, and 27 MeV protons , 2001 .

[13]  S. Watts,et al.  Radiation effects in silicon detectors processed on carbon and oxygen-rich substrates , 2000 .

[14]  Arie Ruzin,et al.  Recent results from the RD-48 (ROSE) Collaboration , 2000 .

[15]  B. Dezillie,et al.  The effect of oxygen impurities on radiation hardness of FZ silicon detectors for HEP after neutron, proton and gamma irradiation , 1999, 1999 IEEE Nuclear Science Symposium. Conference Record. 1999 Nuclear Science Symposium and Medical Imaging Conference (Cat. No.99CH37019).

[16]  Arie Ruzin,et al.  Comparison of radiation damage in silicon induced by proton and neutron irradiation , 1999 .

[17]  P. Allport,et al.  Improving the radiation hardness properties of silicon detectors using oxygenated n-type and p-type silicon , 1999, 1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471).

[18]  Eckhart Fretwurst,et al.  Leakage current of hadron irradiated silicon detectors - material dependence , 1999 .

[19]  H. Feick,et al.  Observation of a bistable defect generated and activated by heat treatments in irradiated high resistivity silicon detectors , 1995 .

[20]  Shaun Roe,et al.  Radiation studies and operational projections for silicon in the ATLAS inner detector , 1995 .

[21]  Zheng Li.  Experimental comparisons among various models for the reverse annealing of the effective concentration of ionized space charges (N/sub eff/) of neutron irradiated silicon detectors , 1994, Proceedings of 1994 IEEE Nuclear Science Symposium - NSS'94.

[22]  E. Barberis,et al.  Temperature effects on radiation damage to silicon detectors , 1993 .

[23]  Michael Moll,et al.  Relation between microscopic defects and macroscopic changes in silicon detector properties after hadron irradiation , 2002 .

[24]  D. Pitzl,et al.  Type inversion in silicon detectors , 1992 .