Epitaxial electrodeposition of lead telluride films on indium phosphide single crystals
暂无分享,去创建一个
[1] H. Cachet,et al. Epitaxial electrodeposition of lead selenide films on indium phosphide single crystals , 2001 .
[2] H. Cachet,et al. Electrodeposition of CdSe on GaAs and InP substrates , 2001 .
[3] H. Cachet,et al. Electrodeposition of PbSe epitaxial films on (111) InP , 2000 .
[4] H. Cachet,et al. Nucleation and Growth of Epitaxial Cadmium Selenide Electrodeposited on InP and GaAs Single Crystals , 2000 .
[5] X. Fang,et al. Molecular beam epitaxy growth of PbSe on BaF2-coated Si(111) and observation of the PbSe growth interface , 1999 .
[6] M. Ritala,et al. Electrodeposition of PbTe thin films , 1998 .
[7] A. Zunger,et al. Electronic and structural anomalies in lead chalcogenides , 1997 .
[8] A. Albu-Yaron,et al. Quantum Size Effects in Chemically Deposited, Nanocrystalline Lead Selenide Films , 1995 .
[9] D. Lincot,et al. Study of CdS Epitaxial Films Chemically Deposited from Aqueous Solutions on InP Single Crystals , 1995 .
[10] Makoto Takahashi,et al. Electrodeposition of PbS films from acidic solution , 1993 .
[11] C. Maissen,et al. Infrared sensor arrays with 3-12 mu m cutoff wavelengths in heteroepitaxial narrow-gap semiconductors on silicon substrates , 1991 .
[12] Armin Lambrecht,et al. Near-Room-temperature operation of Pb1−xSrxSe infrared diode lasers using molecular beam epitaxy growth techniques , 1988 .
[13] H. Preier. Recent advances in lead-chalcogenide diode lasers , 1979 .
[14] H. Gottschalk,et al. Stacking fault energy and ionicity of cubic III–V compounds , 1978 .
[15] E. Streltsov,et al. Effect of Cd(II) on electrodeposition of textured PbSe , 1999 .
[16] M. Ritala,et al. Electrodeposition of lead selenide thin films , 1998 .
[17] M. Leskelä,et al. Growth of lead selenide thin films by the successive ionic layer adsorption and reaction (SILAR) technique , 1996 .