A 16 GHz GaAs FET Frequency Divider

A GaAs FET regenerative frequency divider operating at K/sub u/-band is described, employing a 0.5 µm gate length device biased in the vicinity of pinch-off so as to provide both the gain and the nonlinear properties required for achieving frequency division. The study includes measured circuit responses as functions of drive level for single-tone CW, single-tone pulsed, and two-tone CW excitations.