论文信息 - Influence of Off-Oriented Substrates on Heteroepitaxial Growth of (Ca, Sr)F2 Layers on Si (100) - 字舞流文

Influence of Off-Oriented Substrates on Heteroepitaxial Growth of (Ca, Sr)F2 Layers on Si (100)

S. Furukawa | K. Tsutsui | Junko Asano | T. Minemura

[1] Takashi Ueda,et al. Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate , 1986 .

[2] Hee-Chul Lee,et al. Optimization of the Growth Conditions of Heteroepitaxial GaAs Films on CaF2/Si Structures , 1986 .

[3] Hadis Morkoç,et al. Dislocation reduction in epitaxial GaAs on Si(100) , 1986 .

[4] R. Fathauer,et al. Molecular beam epitaxy growth and applications of epitaxial fluoride films , 1986 .

[5] H. Ishiwara,et al. Lattice matching at elevated substrate temperature for growth of GaAs films with good electrical properties on CaxSr1−xF2/GaAs(100) structures , 1986 .

[6] Hee-Chul Lee,et al. Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF2 and GaAs , 1986 .

[7] Tanemasa Asano,et al. Heteroepitaxial Growth of Group-IIa-Fluoride Films on Si Substrates , 1983 .

[8] H. Ishiwara,et al. Radiation Damage in Epitaxial CaF2 Films on Si Substrates by Ar+ Ion Implantation , 1983 .