Study on Single Event Effect of N-Channel VDMOS Based on Cf Source

Single-event-effect(SEE)damage mechanism and damage mode of n-channel VDMOS were analyzed,and radiation-hardening techniques for VDMOS device were discussed.A 200Vn-channel VDMOS hardened with the proposed radiation-hardening technique was irradiated with Cf source to study single-event-effect of VDMOS devices.For the same device,SEE of VDMOS at different drain-source and gate-source voltages and different vacuum levels was analyzed.This work may serve as a reference for designing SEE hardened VDMOS device,as well as its experimentation and application.