A mesh-arrayed MOSFET (MA-MOS) for high-frequency analog applications

A 0.3 pm Mesh-mayed MaFET(MA-MOS) with ringshaped gate electrode is proposed for high-frequency analog applications. The MA-MOS achieves low noise figure (NFmin) of 0.6 dB at 2 GHz and high maximum oscillation frequency (finax) of 37 GHz, using non-salicide 0.25pm CMOS technology. The parasitic effects of MA-MOS for high frequency performance are farther discussed.

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