Feasibility of hybrid Josephson field effect transistors

We consider the feasibility of fabricating planar superconductor‐semiconductor‐superconductor Josephson junctions in which the junction supercurrent is controlled by a gate electrode isolated from the junction by either a dielectric film (MOS‐JOFET) or a Schottky barrier (MES‐JOFET). We find that device critical currents between ∼1 and 100 μA and critical temperatures approximately a few K appear possible. We discuss the circuit applications of such devices.

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