Modelling The Bipolar Transistor Using Multibias S Parameters Sets

Modelling the bipolar transistor in the high frequency range is an involved problem that has been taken as subject of several works in literature, arousing the interest of many scientists. The reason is that several physical phenomena take place within the active region of the device and even if it’s possible to accurately model the static or low frequency non-linear behaviour of the device the same can’t be said when it’s working in the high frequency range.

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