Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT
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Hiroshi Iwai | Nobuyuki Sugii | Kuniyuki Kakushima | Yoshinori Kataoka | Akira Nishiyama | Hitoshi Wakabayashi | Kazuo Tsutsui | Kenji Natori | Takamasa Kawanago | H. Iwai | N. Sugii | A. Nishiyama | H. Wakabayashi | K. Kakushima | K. Natori | K. Tsutsui | Y. Kataoka | T. Kawanago
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