Single mode cw operation of 658nm AlGaInP lasers based on longitudinal photonic band gap crystal

GaInP–AlGaInP lasers with broad waveguide based on a longitudinal photonic band gap crystal have been studied. Lasers with 10μm stripe width exhibit single transverse mode operation. The vertical beam divergence is about 8° and is insensitive to the drive current. The aspect ratio is ∼2:1. The quality factor for the lateral beam M2 is less than 2 in single mode regime under pulsed excitation. The total maximum continuous wave output power in the single mode regime at 20°C is more than 115mW (for high reflection/antireflection facet coatings), indicating a dramatic reduction in the catastrophic optical mirror damage problem.

[1]  Soohaeng Cho,et al.  660-nm GaInP-AlGaInP quantum-well laser diode structures with reduced vertical beam divergence angle , 2005 .

[2]  A. Shirakawa,et al.  Multi-longitudinal-mode oscillation of self-Q-switched Cr,Yb : YAG laser with a plano-concave resonator , 2005 .

[3]  P. Smowton,et al.  650 nm lasers with narrow far-field divergence , 1998, Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference (Cat. No. 98CH361130).

[4]  Nikolai N. Ledentsov,et al.  Novel concepts for injection lasers , 2002 .

[5]  Shingo Kameyama,et al.  High-Power 200 mW 660 nm AlGaInP Laser Diodes with Low Operating Current , 2004 .

[6]  Mikhail V. Maximov,et al.  High power GaInP/AlGaInP visible lasers (λ = 646 nm) with narrow circular shaped far-field pattern , 2005 .

[7]  Nikolai N. Ledentsov,et al.  Low divergence edge‐emitting laser with asymmetric waveguide based on one‐dimensional photonic crystal , 2005 .

[8]  Motoharu Miyashita,et al.  High-power high-efficiency 660-nm laser diodes for DVD-R/RW , 2003 .

[9]  R. Staske,et al.  High-power diode lasers with small vertical beam divergence emitting at 808 nm , 2001 .

[10]  Mikhail V. Maximov,et al.  Narrow vertical beam divergence laser diode based on longitudinal photonic band crystal waveguide , 2003 .

[11]  Govind P. Agrawal,et al.  Semiconductor Lasers: Past, Present, and Future , 1996 .

[12]  Mikhail V. Maximov,et al.  Complete suppression of filamentation and superior beam quality in quantum-dot lasers , 2003 .

[13]  N. Ledentsov,et al.  High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence , 2005, IEEE Journal of Quantum Electronics.

[14]  D. Welch,et al.  A brief history of high-power semiconductor lasers , 2000, IEEE Journal of Selected Topics in Quantum Electronics.