论文信息 - Device Simulations on Novel High Channel Mobility 4H-SiC Trench MOSFETs and Their Fabrication Processes - 字舞流文

Device Simulations on Novel High Channel Mobility 4H-SiC Trench MOSFETs and Their Fabrication Processes

E. Meyer | R. Minamisawa | T. Jung | J. Gobrecht | N. Marjanovic | H. Rossmann | H. Bartolf | M. Schnieper | A. Bubendorf | F. Zanella