Fast-crystallizing Sb-based thin films under pico- and nanosecond laser pulses
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Carmen N. Afonso | Fernando Catalina | N. H. Rizvi | Javier Solis | C. Afonso | J. Solís | N. Rizvi | F. Catalina | M. C. Morilla | M. A. Ollacarizqueta
[1] H. Mori,et al. Growth kinetics of the antimony layer deposited on glass and SiOx in a vacuum of 10−4 Pa , 1991 .
[2] F. Catalina,et al. Ultrafast reversible phase change in GeSb films for erasable optical storage , 1992 .
[3] C. Afonso,et al. Early stages of laser mixing process in Sb/Ge multilayer thin films , 1993 .
[4] D. Gravesteijn. Materials developments for write-once and erasable phase-change optical recording. , 1988, Applied optics.
[5] N. Yamada,et al. Rapid‐phase transitions of GeTe‐Sb2Te3 pseudobinary amorphous thin films for an optical disk memory , 1991 .
[6] A. Jung,et al. Mechanism of transformations in phase-change optical recording media , 1989 .
[7] C. Afonso,et al. Early stages of melting in Si under nanosecond laser pulse irradiation: A time‐resolved study , 1991 .
[8] C. Afonso,et al. Melting kinetics of Sb under nanosecond UV laser irradiation , 1993 .
[9] C. Afonso,et al. Grain boundary triggering of diffusion in laser melted SbGe bilayer films and surface ripples , 1992 .
[10] D. Turnbull. Under what conditions can a glass be formed , 1969 .