Status of MBE technology for the flexible manufacturing of HgCdTe focal plane arrays
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Rajesh D. Rajavel | G. M. Venzor | John A. Roth | J. E. Jensen | Peter D. Brewer | O. K. Wu | C. A. Cockrum | J. Jensen | Scott M. Johnson | R. Rajavel | G. Venzor | D. M. Jamba | P. Brewer | O. Wu | S. Johnson | J. Roth
[1] C. A. Cockrum,et al. HgCdTe molecular beam epitaxy technology: A focus on material properties , 1995 .
[2] S. J. Tighe,et al. State of the art of Hg-melt LPE HgCdTe at Santa Barbara Research Center , 1992, Optics & Photonics.
[3] W. Scott,et al. Anomalous Electrical Properties of p‐Type Hg1−xCdxTe , 1971 .
[4] Lester J. Kozlowski,et al. Uniform low defect density molecular beam epitaxial HgCdTe , 1996 .
[5] Rajesh D. Rajavel,et al. Heteroepitaxy of HgCdTe(112) infrared detector structures on Si(112) substrates by molecular-beam epitaxy , 1996 .
[6] Owen K. Wu,et al. Growth and properties of In- and As-doped HgCdTe by MBE , 1993 .
[7] J. S. Blakemore. Semiconductor Statistics , 1962 .