论文信息 - Structure of CdTe(111)B grown by MBE on misoriented Si(001)

Structure of CdTe(111)B grown by MBE on misoriented Si(001)

Single domain CdTe(111)B has been grown on Si(001) substrates tilted 1o 2o, and 4o toward [110]. All the layers started with a double-domain structure, then a transition from a double- to a single-domain was observed by reflection high energy electron diffraction. A microscopic picture of this transition is presented. We also measured the tilt between CdTe(111)B and Si(001). The result does not follow the tilt predicted by the currently existing model. A new model of the microscopic mechanism of CdTe(111)B growth is presented. New evidence indicates that optimizing the tilt of the substrate surface is very crucial in improving the CdTe(111)B crystal quality.

[1] W. Ranke,et al. Steps on Si(001) vicinal surfaces tilted by various angles in the [110]-, [100]- and [210]-zones, investigated by high-resolution LEED , 1991 .

[2] S. Sivananthan,et al. Current status of direct growth of CdTe and HgCdTe on silicon by molecular‐beam epitaxy , 1992 .

[3] Yasuhiro Shiraki,et al. Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE , 1986 .

[4] G. Feuillet,et al. Structure of (111) CdTe epilayers on misoriented (001) GaAs , 1990 .

[5] H. Nagai. Structure of vapor‐deposited GaxIn1−xAs crystals , 1974 .

[6] R. Sporken,et al. Molecular‐beam epitaxy of CdTe on large area Si(100) , 1991 .