High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with fmax = 256 GHz and BVCEO = 8.3 V
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Chen Chen | Zhao Yan | Cheng Wei | Gao Han-Chao | Yang Naibin | Gao Hanchao | Yang Naibin | Cheng Chen | Cheng Wei | Zhao Yan
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