论文信息 - High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with fmax = 256 GHz and BVCEO = 8.3 V

High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with fmax = 256 GHz and BVCEO = 8.3 V

An InGaAs/InP DHBT with an InGaAsP composite collector is designed and fabricated using triple mesa structural and planarization technology. All processes are on 3-inch wafers. The DHBT with an emitter area of 1 × 15 μm2 exhibits a current cutoff frequency ft = 170 GHz and a maximum oscillation frequency fmax = 256 GHz. The breakdown voltage is 8.3 V, which is to our knowledge the highest BVCEO ever reported for InGaAs/InP DHBTs in China with comparable high frequency performances. The high speed InGaAs/InP DHBTs with high breakdown voltage are promising for voltage-controlled oscillator and mixer applications at W band or even higher frequencies.

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