论文信息 - GaInAs/InP organometallic vapor phase epitaxy regrowth for ultrafine buried heterostructures with 50 nm pitch toward electron wave devices - 字舞流文

GaInAs/InP organometallic vapor phase epitaxy regrowth for ultrafine buried heterostructures with 50 nm pitch toward electron wave devices

M. Suhara | Y. Miyamoto | K. Furuya | H. Hongo | J. Suzuki

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