Design and Simulation of SR, D and T Flip- Flops modeled with Single Electron Devices

inspiring aspect of SET technology is that it offers control over the movement of one individual electron in the SEC (single electron circuits). In this paper we present SET (single electron tunneling) gate based implementations of SR flip-flop, D flip-flop and T-flip- flops. The whole design and simulation is made using a Monte- Carlo based tool. We propose gate based design of these SECs and verify simulation results using Monte Carlo Simulator (SIMON 2.0). The operation of the basic flip flops is successfully demonstrated through SIMON circuit simulation.

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