The effect of traps on the performance of graphene field-effect transistors
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[1] C. Berger,et al. Electronic Confinement and Coherence in Patterned Epitaxial Graphene , 2006, Science.
[2] Aachen,et al. A Graphene Field-Effect Device , 2007, IEEE Electron Device Letters.
[3] Jing Kong,et al. Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition , 2009, IEEE Electron Device Letters.
[4] Z. Klusek,et al. Local electronic edge states of graphene layer deposited on Ir(1 1 1) surface studied by STM/CITS , 2005 .
[5] A. Geim,et al. Two-dimensional gas of massless Dirac fermions in graphene , 2005, Nature.
[6] B. T. Kelly,et al. Physics of Graphite , 1981 .
[7] Kwang S. Kim,et al. Tuning the graphene work function by electric field effect. , 2009, Nano letters.
[8] Two-dimensional electron and hole gases at the surface of graphite , 2005, cond-mat/0505319.
[9] P. Wallace. The Band Theory of Graphite , 1947 .
[10] C. Keast,et al. Epitaxial Graphene Transistors on SiC Substrates , 2008, IEEE Transactions on Electron Devices.
[11] S. Banerjee,et al. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils , 2009, Science.
[12] Kang L. Wang,et al. A chemical route to graphene for device applications. , 2007, Nano letters.
[13] A. Reina,et al. Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition. , 2009, Nano letters.