Area minimization synthesis for reconfigurable single-electron transistor arrays with fabrication constraints

As fabrication processes exploit even deeper submicron technology, power dissipation has become a crucial issue for most electronic circuit and system designs nowadays. In particular, leakage power is becoming a dominant source of power consumption. Recently, the reconfigurable single-electron transistor (SET) array has been proposed as an emerging circuit design style for continuing Moore's Law due to its ultra-low power consumption. Several automated synthesis approaches have been developed for the reconfigurable SET array in the past few years. Nevertheless, all of those existing methods consider fabrication constraints, which are mandatory, merely in late synthesis stages. In this paper, we propose a synthesis algorithm, featuring both variable reordering and product term reordering, for area minimization. In addition, our algorithm takes those mandatory fabrication constraints into account in early stages for better outcomes. Experimental results show that our new method can achieve an area reduction of up to 24% as compared to current state-of-the-art techniques.

[1]  Narayanan Vijaykrishnan,et al.  Automated mapping for reconfigurable single-electron transistor arrays , 2011, 2011 48th ACM/EDAC/IEEE Design Automation Conference (DAC).

[2]  Seiya Kasai,et al.  Hexagonal binary decision diagram quantum logic circuits using Schottky in-plane and wrap-gate control of GaAs and InGaAs nanowires , 2001 .

[3]  C. Dekker,et al.  Carbon Nanotube Single-Electron Transistors at Room Temperature , 2001, Science.

[4]  Kazuo Yano,et al.  Room-temperature single-electron memory , 1994 .

[5]  Zahid A. K. Durrani,et al.  Room temperature nanocrystalline silicon single-electron transistors , 2003 .

[6]  Narayanan Vijaykrishnan,et al.  Reconfigurable BDD based quantum circuits , 2008, 2008 IEEE International Symposium on Nanoscale Architectures.

[7]  Shashi P. Karna,et al.  Room temperature operational single electron transistor fabricated by focused ion beam deposition , 2007 .

[8]  Vinay Saripalli,et al.  Device circuit co-design using classical and non-classical III–V Multi-Gate Quantum-Well FETs (MuQFETs) , 2011, 2011 International Electron Devices Meeting.

[9]  A. Toriumi,et al.  Programmable single-electron transistor logic for low-power intelligent Si LSI , 2002, 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315).

[10]  Yoshihito Amemiya,et al.  Single-electron logic device based on the binary decision diagram , 1997 .

[11]  Seiya Kasai,et al.  Fabrication of GaAs-based integrated 2-bit half and full adders by novel hexagonal BDD quantum circuit approach , 2001 .

[12]  Narayanan Vijaykrishnan,et al.  A Synthesis Algorithm for Reconfigurable Single-Electron Transistor Arrays , 2013, JETC.

[13]  Randal E. Bryant,et al.  Graph-Based Algorithms for Boolean Function Manipulation , 1986, IEEE Transactions on Computers.

[14]  Stephen Y. Chou,et al.  Silicon single-electron quantum-dot transistor switch operating at room temperature , 1998 .

[15]  H. Hasegawa,et al.  A single electron binary-decision-diagram quantum logic circuit based on Schottky wrap gate control of a GaAs nanowire hexagon , 2002, IEEE Electron Device Letters.

[16]  Narayanan Vijaykrishnan,et al.  On reconfigurable Single-Electron Transistor arrays synthesis using reordering techniques , 2013, 2013 Design, Automation & Test in Europe Conference & Exhibition (DATE).

[17]  Seiya Kasai,et al.  GaAs Schottky wrap-gate binary-decision-diagram devices for realization of novel single electron logic architecture , 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).