论文信息 - The temperature dependence of threshold current for double‐heterojunction lasers

The temperature dependence of threshold current for double‐heterojunction lasers

The temperature dependence of the threshold current has been examined for the double‐heterojunction lasers (AlGa)As, (InGa) (AsP)/InP, and (InGaAs)/(InGa)P with emission wavelengths between 0.8 and 1.4 μm. For all lasers studied, the threshold current density was found to follow the exponential relationship Jth(T) ∝ exp(T/T0), where the constant T0 was found to be directly related to the energy‐band‐gap step, ΔEg, between the recombination region and the adjacent confining layers. The value of T0 was found experimentally to obey the relationship T0=AΔEg, with the constant A having values between 200 and 300 °K/eV for the three types of lasers studied.

[1] I. Hayashi,et al. GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers , 1971 .

[2] M. Ettenberg,et al. Low‐threshold double heterojunction AlGaAs/GaAs laser diodes: Theory and experiment , 1976 .

[3] J. Pankove,et al. Temperature dependence of emission efficiency and lasing threshold in laser diodes , 1968 .

[4] H. C. Casey,et al. Room‐temperature threshold‐current dependence of GaAs‐AlxGa1−xAs double‐heterostructure lasers on x and active‐layer thickness , 1978 .

[5] A. R. Goodwin,et al. Threshold temperature characteristics of double heterostructure Ga1−xAlxAs lasers , 1975 .

[6] Leendert Vriens,et al. Electronic Raman scattering from Al, Ga, In, and Tl atoms , 1975 .

[7] D. Rode. How much Al in the AlGaAs–GaAs laser? , 1974 .