Analysis of Transition Regime Flows in Low Pressure Chemical Vapor Deposition Reactors Using the Direct Simulation Monte Carlo Method
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The direct simulation Monte Carlo method has been used to simulate transition regime flows in a horizontal multiple-wafer low pressure chemical vapor deposition (LPCVD) reactor. Both the region between two wafers and a long section of the entire LPCVD reactor tube were investigated. In the interwafer simulations, a binary mixture consisting of a representative reactant molecule and H 2 was used as a model system and the reactive sticking coefficient, configuration of wafers and gas composition were varied to determine their effects on growth rate uniformity