Analysis of Transition Regime Flows in Low Pressure Chemical Vapor Deposition Reactors Using the Direct Simulation Monte Carlo Method

The direct simulation Monte Carlo method has been used to simulate transition regime flows in a horizontal multiple-wafer low pressure chemical vapor deposition (LPCVD) reactor. Both the region between two wafers and a long section of the entire LPCVD reactor tube were investigated. In the interwafer simulations, a binary mixture consisting of a representative reactant molecule and H 2 was used as a model system and the reactive sticking coefficient, configuration of wafers and gas composition were varied to determine their effects on growth rate uniformity