Platinum silicide formation under ultrahigh vacuum and controlled impurity ambients

The thin‐film Pt‐Si silicide system has been investigated under clean, well controlled conditions. A (UHV) ultrahigh vacuum apparatus for this study is described which allows preparation of atomically clean Si surfaces and subsequent evaporation of Pt films in vacuo 10−9 Torr. Samples are annealed and characterized with in situ (RBS) Rutherford backscattering and (AES) Auger electron spectroscopy and later examined with (TEM) transmission electron microscopy and (SEM) scanning electron microscopy techniques. Impurity‐free Pt films deposited on clean, room‐temperature Si substrates react initially to form Pt2Si and then PtSi with diffusivities one to three orders of magnitude higher than previously reported in the 200–325 °C temperature range. However, the observed activation energies of 1.3±0.2 eV and 1.5±0.2 eV are in reasonable agreement with previous reports. No differences in PtSi‐Si interface width, PtSi surface character, growth rates, and phase growth progression are observed between extremely clea...

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