论文信息 - 188 GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs

188 GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs

The authors have fabricated 0.14 /spl mu/m T-gate, doped-channel In/sub 0.8/Ga/sub 0.2/P/In/sub 0.53/Ga/sub 0.47/As/InP HFETs. An extrinsic peak transconductance of 722 mS/mm and a maximum current density of 761 mA/mm were obtained. The doped-channel HFET exhibits excellent RF performance with f/sub T/=188 GHz and f/sub max/=225 GHz at V/sub ds/=1.5 V. These are state-of-the-art results for doped-channel HFETs and are comparable to the best reported performance of InP p-HEMTs with similar gate length.

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