Comprehensive modeling of electromigration induced interconnect degradation mechanisms

The reliability requirements on modern interconnect and the physical complexity of electromigration phenomena demand close and systematic application of experimental and TCAD based methods for the assessment of interconnect failure and the development of sophisticated layout design rules. We present and discuss state-of-the art electromigration models for both phases of failure development: void nucleation and void evolution. The discussion includes the role of copper microstructure, mechanical stress, capping layer, and void nucleation conditions. A concept for usage of the presented models for prediction of time-to-failure in three- dimensional interconnect geometries is given and demonstrated on examples. The results of simulations are discussed and verified with results of accelerated interconnect testing.

[1]  G. Bolton.  Reliability , 2003, Medical Humanities.

[2]  Valeriy Sukharev,et al.  Physically-based simulation of the early and long-term failures in the copper dual damascene interconnect , 2003, IEEE International Integrated Reliability Workshop Final Report, 2003.

[3]  J. R. Lloyd,et al.  A simple model for stress voiding in passivated thin film conductors , 1992 .

[4]  Siegfried Selberherr,et al.  An adaptive grid approach for the simulation of electromigration induced void migration , 2002, International Conferencre on Simulation of Semiconductor Processes and Devices.

[5]  Allan F. Bower,et al.  INFLUENCE OF ANISOTROPIC SURFACE DIFFUSIVITY ON ELECTROMIGRATION INDUCED VOID MIGRATION AND EVOLUTION , 1999 .

[6]  Valeriy Sukharev,et al.  Effect of interface strength on electromigration-induced inlaid copper interconnect degradation: Experiment and simulation , 2005, International Journal of Materials Research.

[7]  E. Zschech,et al.  In situ SEM observation of electromigration phenomena in fully embedded copper interconnect structures , 2002 .

[8]  T. M. Makhviladze,et al.  General model for mechanical stress evolution during electromigration , 1999 .

[9]  von Glasow,et al.  Zuverlässigkeitsaspekte von Kupfermetallisierungen in Integrierten Schaltungen , 2006 .

[10]  Ashish Kumar,et al.  A phase field model for failure in interconnect lines due to coupled diffusion mechanisms , 2002 .

[11]  R. M. Bradley,et al.  SIMULATIONS AND THEORY OF ELECTROMIGRATION-INDUCED SLIT FORMATION IN UNPASSIVATED SINGLE-CRYSTAL METAL LINES , 1999 .

[12]  A. Voter,et al.  Diffusion mechanisms in Cu grain boundaries , 2000 .

[13]  I. Blech.  Electromigration in thin aluminum films on titanium nitride , 1976 .

[14]  Ehrenfried Zschech,et al.  In situ observation of electromigration-induced void migration in dual-damascene Cu interconnect structures , 2004 .

[15]  Paul A. Flinn,et al.  Mechanical Stress in VLSI Interconnections: Origins, Effects, Measurement, and Modeling , 1995 .

[16]  Robert Rosenberg,et al.  Void Formation and Growth During Electromigration in Thin Films , 1971 .

[17]  I. Blech,et al.  Measurement of stress gradients generated by electromigration , 1977 .

[18]  P. Dederichs,et al.  Anisotropic diffusion in stress fields , 1978 .

[19]  M. Korhonen,et al.  Stress evolution due to electromigration in confined metal lines , 1993 .

[20]  E. Shin,et al.  A three-dimensional nonlinear analysis of electromigration-induced resistance change and Joule heating in microelectronic interconnects , 2001 .

[21]  Bruce M. Clemens,et al.  Void Nucleation in Passivated Interconnect Lines: Effects of Site Geometries, Interfaces, and Interface Flaws , 1997 .

[22]  W. W. Mullins,et al.  Mass transport at interfaces in single component systems , 1995 .

[23]  A. V. Vairagar,et al.  Effect of interface modification on EM-induced degradation mechanisms in copper interconnects , 2006 .

[24]  J. J. Clement,et al.  Electromigration modeling for integrated circuit interconnect reliability analysis , 2001 .

[25]  Conyers Herring,et al.  Stress generation by electromigration , 1976 .

[26]  Bruce M. Clemens,et al.  Void Nucleation on a Contaminated Patch , 1997 .

[27]  Valeriy Sukharev,et al.  Microstructure effect on EM-induced copper interconnect degradation: Experiment and simulation , 2005 .

[28]  S. Hau-Riege,et al.  Contrasting failure characteristics of different levels of Cu dual-damascene metallization , 2002, Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614).

[29]  Jian-Qiang Lu,et al.  Modeling Thermal Stresses in 3-D IC Interwafer Interconnects , 2006, IEEE Transactions on Semiconductor Manufacturing.

[30]  Valeriy Sukharev.  Simulation of Microstructure Influence on EM-Induced Degradation in Cu Interconnects , 2006 .

[31]  A. S. Oates,et al.  Electromigration failure of contacts and vias in sub-micron integrated circuit metallizations , 1996 .

[32]  J. J. Clement,et al.  Electromigration in copper conductors , 1995 .