论文信息 - A physical model for threshold voltage instability in Si/sub 3/N/sub 4/-gate H/sup +/-sensitive FET's (pH ISFET's) - 字舞流文

A physical model for threshold voltage instability in Si/sub 3/N/sub 4/-gate H/sup +/-sensitive FET's (pH ISFET's)

S. D. Collins | R. L. Smith | Rosemary L. Smith | S. Jamasb | S. Collins