Epitaxial growth of high quality BAlGaN quaternary lattice matched to AlN on 6H–SiC substrate by LP-MOVPE for deep-UV emission
暂无分享，去创建一个
[1] T. Honda,et al. Band-Gap Energy and Effective Mass of BGaN , 1999 .
[2] D. Greve,et al. Growth of GaBN ternary solutions by organometallic vapor phase epitaxy , 1997 .
[3] Fernando Ponce,et al. Microstructure of GaN epitaxy on SiC using AlN buffer layers , 1995 .