FP 16.6: A 2.5V 256-Level Non-Volatile Analog Storage Device Using EEPROM Technology
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Trevor Blyth | Tony Dunne | Tin Lam | Hieu Van Tran | Hai Wang | David Sowards | B. S. Nataraj | Genda Hu | Larry Engh | Vishal Sarin | Hagop A. Nazarian
[1] Trevor Blyth,et al. A Non-volatile Analog Storage Device Using EEPROM Technology , 1991, 1991 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
[2] Ranjeet Alexis,et al. A multilevel-cell 32 Mb flash memory , 1995, Proceedings ISSCC '95 - International Solid-State Circuits Conference.