Extraction of the bulk-charge effect parameter in MOSFETs
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A method is presented to extract the bulk charge effect parameter in MOSFET. The method requires measuring the drain current as a function of gate voltage at two small values of the drain voltage. The procedure was tested with Id-Vgs characteristics modeled with SPICE and with a a 2-D device simulator. It was also applied to experimental Id-Vgs characteristics.
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