Semiconductor memory device having bit registering layer and method for driving thereof

A semiconductor memory device having a bit registering layer and a driving method thereof are provided to increase yield of the semiconductor memory device, by solving a problem of difficult redundancy. In a semiconductor memory device having a plurality of memory cells to store data, a bit registering layer(100) writes information indicating good or bad state of each memory cell. The bit registering layer comprises a plurality of bit registers corresponding to each memory cell, where the bit register has a fuse structure, and is written with data 0 when the corresponding memory cell has a bad state.