Inverstigation of high turn-on speed MOS-Triggered SCR in 0.13μm CMOS process

MOS-Triggered Silicon Controlled Rectifier (SCR) has been used as on chip Electrostatic Discharge (ESD) protection. However, the inherit slow turn-on speed is a major drawback of SCR. The compact MOS-Triggered SCR devices have been proposed and investigated in a 0.13μm CMOS process with the consideration of turn-on speed. From the test results, the turn on time of compact MOS-Triggered SCR has improved from ~13ns of merged MOS-triggered SCR to ~4ns. Compared to merged MOS-Triggered SCR devices, the compact MOS-Triggered SCR devices has a lower trigger voltage, higher turn-on speed, lower overshoot voltage lower turn-on resistance and higher failure current which makes it more suitable for nanometer CMOS ESD protection.

[1]  Steven H. Voldman.  ESD: Circuits and Devices , 2005 .

[2]  C.C. Russ,et al.  GGSCRs: GGNMOS Triggered silicon controlled rectifiers for ESD protection in deep sub-micron CMOS processes , 2001, 2001 Electrical Overstress/Electrostatic Discharge Symposium.

[3]  S.H. Voldman,et al.  RC-triggered PNP and NPN simultaneously switched silicon controlled rectifier ESD networks for sub-0.18/spl mu/m technology , 2005, Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005..

[4]  Chung-Yu Wu,et al.  A gate-coupled PTLSCR/NTLSCR ESD protection circuit for deep-submicron low-voltage CMOS ICs , 1997 .

[5]  K.-C. Hsu,et al.  Native-NMOS-Triggered SCR With Faster Turn-On Speed for Effective ESD Protection in a 0.13-$rm murm m$CMOS Process , 2005, IEEE Transactions on Device and Materials Reliability.

[6]  M. Mergens,et al.  Diode-triggered SCR (DTSCR) for RF-ESD protection of BiCMOS SiGe HBTs and CMOS ultra-thin gate oxides , 2003, IEEE International Electron Devices Meeting 2003.

[7]  Shih-Hung Chen,et al.  Optimization on MOS-Triggered SCR Structures for On-Chip ESD Protection , 2009, IEEE Transactions on Electron Devices.

[8]  Xiaofeng Fan,et al.  A novel low voltage base-modulated SCR ESD device with low latch-up risk , 2009, 2009 31st EOS/ESD Symposium.

[9]  D.H. Huang,et al.  Investigation of turn-on speeds of electrostatic discharge protection devices using transmission-line pulsing technique , 2008, 2008 2nd IEEE International Nanoelectronics Conference.

[10]  Shih-Hung Chen,et al.  Implementation of Initial-On ESD Protection Concept With PMOS-Triggered SCR Devices in Deep-Submicron CMOS Technology , 2007, IEEE Journal of Solid-State Circuits.

[11]  Ming-Dou Ker,et al.  Latchup-free ESD protection design with complementary substrate-triggered SCR devices , 2003 .