High efficiency 2 GHz power Si-MOSFET design under low supply voltage down to 1 V
暂无分享,去创建一个
T. Ohguro | E. Morifuji | T. Yoshitomi | Y. Katsumata | H. Iwai | K. Matsuzaki | M. Saito | T. Morimoto | H. Iwai | E. Morifuji | T. Ohguro | Y. Katsumata | M. Saito | T. Yoshitomi | H. Momose | K. Matsuzaki | T. Morimoto | H.S. Momose | K. Murakami | K. Murakami
[1] C. Fiegna,et al. Sub-50 nm gate length n-MOSFETs with 10 nm phosphorus source and drain junctions , 1993, Proceedings of IEEE International Electron Devices Meeting.
[2] Mineo Katsueda,et al. Highly efficient 1.5GHz si power MOSFET for digital cellular front end , 1992, Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics.
[3] D. Ueda,et al. 1.5 V-operation GaAs spike-gate power FET with 65% power-added efficiency , 1995, Proceedings of International Electron Devices Meeting.
[4] Hiroshi Iwai,et al. A high frequency 0.35 /spl mu/m gate length power silicon NMOSFET operating with breakdown voltage of 13 V , 1995, Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.
[5] T. Okabe,et al. Extremely high efficient UHF power MOSFET for handy transmitter , 1983, 1983 International Electron Devices Meeting.
[6] T. Ohguro,et al. High performance 0.15 /spl mu/m single gate Co salicide CMOS , 1996, 1996 Symposium on VLSI Technology. Digest of Technical Papers.