Process-induced strain in silicon-on-insulator materials

We present a detailed investigation of the influence of oxidation and thinning processes on the in-plane stress in silicon-on-insulator materials. Combining double x-ray diffraction, Fourier transformed infrared and micro-Raman spectroscopy, we show that one can separately evaluate the stress present in the silicon over layer, the buried oxide and the underlying (handle) silicon wafer at any time of a device-forming process.

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