A 50-V, 0.7-m Omega *cm/sup 2/, vertical-power DMOSFET

A 50-V vertical power MOSFET with extremely low specific on resistance is reported. Devices with a cell density as high as 8 million cells/in/sup 2/ and capable of switching 160 A of current have been successfully fabricated using an improved fabrication technology which used low processing temperatures, double-layer interlevel dielectric, shallow source implants, and an improved source contact metallurgy. The lowest measured specific on resistances are 0.8 and 0.7 m Omega *cm/sup 2/, respectively, under continuous and pulsed bias conditions for FETs capable of blocking 50 V in the reverse direction. This result represents the best ever reported forward conductivity for a 50-V power MOSFET.<<ETX>>

[1]  M.S. Adler,et al.  A large area power MOSFET designed for low conduction losses , 1981, 1981 International Electron Devices Meeting.

[2]  B.J. Baliga,et al.  Revolutionary innovations in power discrete devices , 1986, 1986 International Electron Devices Meeting.

[3]  J.D. Plummer,et al.  Modeling of the on-resistance of LDMOS, VDMOS, and VMOS power transistors , 1980, IEEE Transactions on Electron Devices.

[4]  Chenming Hu,et al.  Optimum design of power MOSFET's , 1984, IEEE Transactions on Electron Devices.

[5]  R. W. Coen,et al.  A high-performance planar power MOSFET , 1980, IEEE Transactions on Electron Devices.

[6]  V.A.K. Temple,et al.  A 600-volt MOSFET designed for low on-resistance , 1980, IEEE Transactions on Electron Devices.

[7]  K. Lisiak,et al.  Optimization of nonplanar power MOS transistors , 1978, IEEE Transactions on Electron Devices.