Room-Temperature Operation of 2.4 μm InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density

GaSb-based 2.4 μm InGaAsSb/AlGaAsSb type-I quantum-well laser diode is fabricated. The laser is designed consisting of three In0.35Ga0.65As0.1Sb0.9/Al0.35Ga0.65As0.02Sb0.98 quantum wells with 1% compressive strain located in the central part of an undoped Al0.35Ga0.65As0.02Sb0.98 waveguide layer. The output power of the laser with a 50-μm-wide 1-mm-long cavity is 28mW, and the threshold current density is 400 A/cm2 under continuous wave operation mode at room temperature.

[1]  Rui Q. Yang,et al.  Continuous-wave operation of distributed feedback interband cascade lasers , 2004 .

[2]  Wang Guowei,et al.  Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers , 2011 .

[3]  High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy , 2014 .

[4]  R. Martinelli,et al.  2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers , 1999, IEEE Photonics Technology Letters.

[5]  Leon Shterengas,et al.  2.3 /spl mu/m type-I quantum well GaInAsSb/AlGaAsSb/GaSb laser diodes with quasi-CW output power of 1.4W , 2007 .

[6]  M. Fischer,et al.  Continuous-wave operation of type-I quantum well DFB laser diodes emitting in 3.4 μm wavelength range around room temperature , 2011 .

[7]  Leon Shterengas,et al.  Continuous wave operated 3.2 µm type-I quantum-well diode lasers with the quinary waveguide layer , 2009 .

[8]  Leon Shterengas,et al.  Type-I GaSb-Based Laser Diodes Operating in 3.1- to 3.3-$\mu$m Wavelength Range , 2010, IEEE Photonics Technology Letters.

[9]  Hao Lee,et al.  4 W quasi-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes , 1997 .

[10]  S. Schilt,et al.  Novel Helmholtz-based photoacoustic sensor for trace gas detection at ppm level using GaInAsSb/GaAlAsSb DFB lasers. , 2006, Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy.

[11]  Markus-Christian Amann,et al.  Room-temperature 3.73 µm GaSb-based type-I quantum-well lasers with quinternary barriers , 2012 .

[12]  T. Hosoda,et al.  Type-I Diode Lasers for Spectral Region Above 3 μm , 2011, IEEE Journal of Selected Topics in Quantum Electronics.

[13]  M. Kisin,et al.  Effect of Quantum Well Compressive Strain Above 1% On Differential Gain and Threshold Current Density in Type-I GaSb-Based Diode Lasers , 2008, IEEE Journal of Quantum Electronics.

[14]  Pedro Barrios,et al.  Single-mode 2.4 μm InGaAsSb/AlGaAsSb distributed feedback lasers for gas sensing , 2009 .

[15]  Chenglu Lin,et al.  Low threshold room-temperature continuous-wave operation of 2.24–3.04 μm GaInAsSb/AlGaAsSb quantum-well lasers , 2004 .