Photoconductivity of Semiconductor Materials at Low Temperatures

We have extended the technique based on a whispering gallery mode disk dielectric resonator (WGM DDR) to study the changes of photoconductivity of low-loss semiconductors under the optical radiation at low temperatures in the millimeter waveband. For this purpose the cryodielectrometer was modified, and a set of DDRs made from semiconductor materials as Si:Au, InP etc. was investigated at dark and light illumination conditions. Peculiarities of variation of resonance frequency and Q-factor of DDR under illumination by laser sources of three different optical wavelength are shown. Preliminary results have shown the possibility of implementation of WGM DDR technique for study of photoconductivity properties of high-resistance semiconductors at low temperatures in the millimeter waveband.

[1]  L. V. Scalvi,et al.  Transient decay of photoinduced current in semiconductors and heterostructures , 2019, Journal of Physics D: Applied Physics.

[2]  J. Booth,et al.  Impedance tuning with photoconductors to 40 GHz , 2019, IET Optoelectronics.

[3]  A. S. Plevako,et al.  Dielectric losses of high-resistivity semiconductor materials in EHF-band at cryogenic temperatures , 2016, 2016 9th International Kharkiv Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves (MSMW).

[4]  J. Krupka,et al.  Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs, and 4H-SiC semiconductors under light illumination at cryogenic temperatures , 2010, 1010.1610.

[5]  J. Krupka,et al.  Use of Whispering-Gallery Modes and Quasi- ${\rm TE}_{0{ np}}$ Modes for Broadband Characterization of Bulk Gallium Arsenide and Gallium Phosphide Samples , 2008, IEEE Transactions on Microwave Theory and Techniques.

[6]  J. Krupka,et al.  Measurements of Permittivity, Dielectric Loss Tangent, and Resistivity of Float-Zone Silicon at Microwave Frequencies , 2006, IEEE Transactions on Microwave Theory and Techniques.

[7]  J. Krupka,et al.  Room temperature measurement of the anisotropic loss tangent of sapphire using the whispering gallery mode technique , 2006, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control.

[8]  J. Krupka,et al.  The microwave characterization of single crystal lithium and calcium fluoride at cryogenic temperatures , 2004, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control.

[9]  S. Tarapov,et al.  Low temperature complex for dielectrometry measurements , 2004, The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828).

[10]  Michael E. Tobar,et al.  Use of whispering-gallery modes for complex permittivity determinations of ultra-low-loss dielectric materials , 1999 .

[11]  Michael E. Tobar,et al.  Complex permittivity of some ultralow loss dielectric crystals at cryogenic temperatures , 1999 .

[12]  Jerzy Krupka,et al.  Dielectric characterization of low-loss materials a comparison of techniques , 1998 .

[13]  H. Queisser,et al.  Decay kinetics of persistent photoconductivity in semiconductors. , 1986, Physical review. B, Condensed matter.

[14]  H. Queisser,et al.  Persistent photoconductivity in sulfur-diffused silicon , 1984 .

[15]  H. Queisser,et al.  Hall-Effect Analysis of Persistent Photocurrents in n-GaAs Layers , 1979 .

[16]  D. Lang,et al.  Trapping characteristics and a donor-complex ( DX ) model for the persistent-photoconductivity trapping center in Te-doped Al x Ga 1 − x As , 1979 .

[17]  M. Girtan.  New Trends in Solar Cells Research , 2018 .

[18]  S. Tarapov,et al.  MICROWAVE LOSS IN LOW-ABSORPTION DIAMOND-LIKE MATERIALS AT 1 K T < 300 K THE PHENOMENOLOGICAL SIMULATION , 2016 .

[19]  G. E. Zardas,et al.  Room temperature persistent photoconductivity in GaP:S , 1998 .