Resist metrology for lithography simulation, part I: exposure parameter measurements

The experimental measurement of the photoresist ABC modeling parameters is described and three different data analysis techniques are compared. The best technique, the use of full exposure simulation to fit the data, is shown to be more accurate than the conventional data analysis method over a wide variety of typical substrates. In particular, artificial swing curve like behavior is observed on non-ideal substrates using the standard data analysis, but is readily accounted for in the more accurate full simulation method.