论文信息 - Wide-band, low-noise, matched-impedance amplifiers in submicrometer MOS technology

Wide-band, low-noise, matched-impedance amplifiers in submicrometer MOS technology

Circuit design techniques for realizing wideband, low-noise, matched-impedance amplifiers in submicrometer MOS technology are discussed. A circuit configuration with two feedback loops has been fabricated in an experimental 1-/spl mu/m NMOS technology. The fabricated amplifier has an insertion gain of 16.35 dB, a -3-dB bandwidth of 758 MHz, a maximum input voltage standing-wave ratio (VSWR) of 2.45, a maximum output VSWR of 1.60, and an average noise figure of 6.7 dB (with reference to a 50-/spl mu/m source resistance) from 10 to 758 MHz.

R. G. Meyer | K.-Y. Toh | D. C. Soo | G. Chin | A. M. Voshchenkov

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