Modeling of GaN-Based Normally-Off FinFET

In this letter, a macromodel for normally-off (enhancement mode) AlGaN/GaN-based FinFET (2-DEG channel at top with two MOS like sidewall channels) is proposed. AlGaN/GaN-based FinFET devices have improved gate control on the channel due to additional sidewall gates compared with planar structures, but device characteristics exhibit strong nonlinear dependence on fin-width. The proposed model captures both 2-DEG and sidewall channel conduction as well as the fin-width dependency on device characteristics. Model shows excellent agreement with state-of-the-art experimental data.

[1]  F. Schwierz,et al.  Theoretical Investigation of Trigate AlGaN/GaN HEMTs , 2013, IEEE Transactions on Electron Devices.

[2]  T. Chow,et al.  Sidewall Dominated Characteristics on Fin-Gate AlGaN/GaN MOS-Channel-HEMTs , 2013, IEEE Transactions on Electron Devices.

[3]  S. Cristoloveanu,et al.  High-Performance GaN-Based Nanochannel FinFETs With/Without AlGaN/GaN Heterostructure , 2013, IEEE Transactions on Electron Devices.

[4]  Tamotsu Hashizume,et al.  Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs , 2013, IEEE Transactions on Electron Devices.

[5]  Thomas Zimmer,et al.  Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design , 2013, IEEE Transactions on Electron Devices.

[6]  B. Lu,et al.  Tri-Gate Normally-Off GaN Power MISFET , 2012, IEEE Electron Device Letters.

[7]  Baoshun Zhang,et al.  Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs , 2012, IEEE Electron Device Letters.

[8]  T. Palacios,et al.  Top-down fabrication of AlGaN/GaN nanoribbons , 2011 .

[9]  T. Hashizume,et al.  Drain Current Stability and Controllability of Threshold Voltage and Subthreshold Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor , 2009 .

[10]  G. Verzellesi,et al.  Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives , 2008, IEEE Transactions on Device and Materials Reliability.

[11]  T. Mizutani,et al.  AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation , 2007, IEEE Electron Device Letters.

[12]  Yong Cai,et al.  Enhancement-Mode$hboxSi_3hboxN_4hbox/AlGaN/GaN$MISHFETs , 2006, IEEE Electron Device Letters.

[13]  S. Keller,et al.  High-performance E-mode AlGaN/GaN HEMTs , 2006, IEEE Electron Device Letters.

[14]  I. Omura,et al.  Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications , 2006, IEEE Transactions on Electron Devices.

[15]  Ilesanmi Adesida,et al.  Recessed-gate enhancement-mode GaN HEMT with high threshold voltage , 2005 .

[16]  U. Mishra,et al.  AlGaN/GaN HEMTs-an overview of device operation and applications , 2002, Proc. IEEE.

[17]  Kevin J. Chen,et al.  Enhancement-Mode Si 3 N 4 /AlGaN/GaN MISHFETs , 2006 .