A Novel High-Speed SiC MOSFET Driver with a Low Switch-Voltage Stress

A novel high-speed SiC MOSFET driver with a low switch-voltage stress is presented in this paper. In the proposed driver, a harmonic component is injected to the conventional class-E inverter. Consequently, the class-E driver proposed in this paper not only maintains the strong points of the conventional class-E inverter, such as simple topology and high-frequency high-efficiency operation, but also has its own advantage of low switch-voltage stress. The proposed class-E driver is designed in this paper. Additionally, the PSpice-simulation and laboratory experiment are carried out. It can be seen from the PSpice-simulation and experimental results that all the switch-voltage waveforms satisfy the zero-voltage switching (ZVS) and zero-derivative switching (ZDS) conditions. Therefore, the proposed class-E driver is available in the high-frequency and high-efficiency applications. Moreover, a quite lower switch-voltage stress is obtained in the proposed class-E driver. The simulated and experimental results agreed with the theoretical one well. These results mentioned before demonstrated the proposed driver’s validity.

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