GaAsAl0.3Ga0.7As resonant tunneling diodes with atomically flat interfaces grown on (411)A GaAs substrates by MBE
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S. Hiyamizu | N. Sano | K. Shinohara | S. Shimomura | T. Motokawa | A. Adachi | Y. Okamoto | K. Kasahara
暂无分享,去创建一个
S. Hiyamizu | N. Sano | K. Shinohara | S. Shimomura | T. Motokawa | A. Adachi | Y. Okamoto | K. Kasahara