Anomalous diffusion behavior of Mg in GaAs
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M. Small | R. Ghez | R. Potemski | W. Reuter
[1] B. Tuck,et al. Annealing of zinc-diffused GaAs , 1981 .
[2] M. Small,et al. Al diffusivity as a function of growth rate during the formation of (GaAl)As heterojunctions by liquid phase epitaxy , 1981 .
[3] K. Wittmaack,et al. System for combined SIMS‐AES‐XPS studies of solids , 1980 .
[4] M. Small,et al. The Dissolution Kinetics of GaAs in Undersaturated Isothermal Solutions in the Ga‐Al‐As System , 1980 .
[5] Ming L. Yu,et al. Charging effects in the secondary ion mass spectrometric analysis of targets containing low‐conductivity regions , 1980 .
[6] S. Gonda,et al. Doping and electrical properties of Mg in LPE AlxGa1−xAs , 1979 .
[7] M. Small,et al. An automated system for the growth of multilayered structures in the (GaAl)As system by LPE , 1979 .
[8] Wataru Susaki,et al. New structures of GaAlAs lateral-injection laser for low-threshold and single-mode operation , 1977 .
[9] P. Petroff. Transmission electron microscopy of interfaces in III–V compound semiconductors , 1977 .
[10] T. Fukui,et al. Improved Surface Morphology of AlGaAs-GaAs Heteroepitaxial Wafers by Magnesium Doping , 1976 .
[11] L. L. Chang,et al. Interdiffusion between GaAs and AlAs , 1976 .
[12] B. Tuck,et al. Introduction to diffusion in semiconductors , 1975, 1975 First European Solid State Circuits Conference (ESSCIRC).